Characteristics of 6H-silicon carbide PIN diodes prototyping by laser doping
Abbreviated Journal Title
J. Electron. Mater.
silicon carbide; laser doping; lattice defect; PIN diode; SILICON-CARBIDE; ION-IMPLANTATION; DIFFUSION; SEMICONDUCTORS; JUNCTIONS; ALUMINUM; LAYERS; INP; AL; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied
Silicon carbide PIN diodes have been fabricated using a direct-write laser-doping technique that reduces defect generation compared to the conventional ion-implantation technique. Nitrogen and aluminum were successfully incorporated into SiC as n-type and p-type dopants, respectively. Rutherford backscattering studies were conducted to compare the lattice defect generation by the laser-doping and ion-implantation techniques. No amorphization was observed in laser-doped samples, eliminating the need for high-temperature annealing. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the PIN diodes were also investigated. The silicon carbide diodes are intended for high-temperature and high-voltage power electronics applications.
Journal of Electronic Materials
"Characteristics of 6H-silicon carbide PIN diodes prototyping by laser doping" (2005). Faculty Bibliography 2000s. 5722.