Characteristics of 6H-silicon carbide PIN diodes prototyping by laser doping

    Authors

    Z. Tian; N. R. Quick;A. Kar

    Comments

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    Abbreviated Journal Title

    J. Electron. Mater.

    Keywords

    silicon carbide; laser doping; lattice defect; PIN diode; SILICON-CARBIDE; ION-IMPLANTATION; DIFFUSION; SEMICONDUCTORS; JUNCTIONS; ALUMINUM; LAYERS; INP; AL; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied

    Abstract

    Silicon carbide PIN diodes have been fabricated using a direct-write laser-doping technique that reduces defect generation compared to the conventional ion-implantation technique. Nitrogen and aluminum were successfully incorporated into SiC as n-type and p-type dopants, respectively. Rutherford backscattering studies were conducted to compare the lattice defect generation by the laser-doping and ion-implantation techniques. No amorphization was observed in laser-doped samples, eliminating the need for high-temperature annealing. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the PIN diodes were also investigated. The silicon carbide diodes are intended for high-temperature and high-voltage power electronics applications.

    Journal Title

    Journal of Electronic Materials

    Volume

    34

    Issue/Number

    4

    Publication Date

    1-1-2005

    Document Type

    Article

    Language

    English

    First Page

    430

    Last Page

    438

    WOS Identifier

    WOS:000228633000022

    ISSN

    0361-5235

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