Title

Characteristics of 6H-silicon carbide PIN diodes prototyping by laser doping

Authors

Authors

Z. Tian; N. R. Quick;A. Kar

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

J. Electron. Mater.

Keywords

silicon carbide; laser doping; lattice defect; PIN diode; SILICON-CARBIDE; ION-IMPLANTATION; DIFFUSION; SEMICONDUCTORS; JUNCTIONS; ALUMINUM; LAYERS; INP; AL; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied

Abstract

Silicon carbide PIN diodes have been fabricated using a direct-write laser-doping technique that reduces defect generation compared to the conventional ion-implantation technique. Nitrogen and aluminum were successfully incorporated into SiC as n-type and p-type dopants, respectively. Rutherford backscattering studies were conducted to compare the lattice defect generation by the laser-doping and ion-implantation techniques. No amorphization was observed in laser-doped samples, eliminating the need for high-temperature annealing. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the PIN diodes were also investigated. The silicon carbide diodes are intended for high-temperature and high-voltage power electronics applications.

Journal Title

Journal of Electronic Materials

Volume

34

Issue/Number

4

Publication Date

1-1-2005

Document Type

Article

Language

English

First Page

430

Last Page

438

WOS Identifier

WOS:000228633000022

ISSN

0361-5235

Share

COinS