Fabrication of hybrid n-ZnMgO/n-ZnO/p-AlGaN/p-GaN light-emitting diodes
Abbreviated Journal Title
Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Brief Commun. Rev. Pap.
ZnO; GaN; UV emitter; light-emitting diodes (LEDs); heterostructure; MOLECULAR-BEAM EPITAXY; P-TYPE ZNO; THIN-FILMS; GROWTH; SAPPHIRE; POLARITY; DEPOSITION; TEMPLATES; MGXZN1-XO; EPILAYERS; Physics, Applied
We report on the fabrication of UV light-emitting diodes (LEDs) based on a p-n junction n-ZnMgO/n-ZnO/p-AlGaN/p-GaN semiconductor triple-heterostructure. Radio-frequency plasma-assisted molecular beam epitaxy was used to grow the complete heterostructure on p-AlGaN/p-GaN c-plane sapphire templates. Cross-sectional transmission electron microscopy showed single-crystal quality of the pseudomorphically grown ZnO active region of the device. The LEDs were fabricated by a process involving both wet and dry etching. Electroluminescence emission most likely associated with ZnO excitonic transition was observed up to 370 degrees C. The results show the potential of ZnO-based materials for UV emitters of potentially lower cost and with comparable or higher emission intensity than comparable AlGaN/GaN devices.
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers
"Fabrication of hybrid n-ZnMgO/n-ZnO/p-AlGaN/p-GaN light-emitting diodes" (2005). Faculty Bibliography 2000s. 5798.