Fabrication of hybrid n-ZnMgO/n-ZnO/p-AlGaN/p-GaN light-emitting diodes

    Authors

    H. S. Yang; S. Y. Han; Y. W. Heo; K. H. Baik; D. P. Norton; S. J. Pearton; F. Ren; A. Osinsky; J. W. Dong; B. Hertog; A. M. Dabiran; P. P. Chow; L. Chernyak; T. Steiner; C. J. Kao;G. C. Chi

    Comments

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    Abbreviated Journal Title

    Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Brief Commun. Rev. Pap.

    Keywords

    ZnO; GaN; UV emitter; light-emitting diodes (LEDs); heterostructure; MOLECULAR-BEAM EPITAXY; P-TYPE ZNO; THIN-FILMS; GROWTH; SAPPHIRE; POLARITY; DEPOSITION; TEMPLATES; MGXZN1-XO; EPILAYERS; Physics, Applied

    Abstract

    We report on the fabrication of UV light-emitting diodes (LEDs) based on a p-n junction n-ZnMgO/n-ZnO/p-AlGaN/p-GaN semiconductor triple-heterostructure. Radio-frequency plasma-assisted molecular beam epitaxy was used to grow the complete heterostructure on p-AlGaN/p-GaN c-plane sapphire templates. Cross-sectional transmission electron microscopy showed single-crystal quality of the pseudomorphically grown ZnO active region of the device. The LEDs were fabricated by a process involving both wet and dry etching. Electroluminescence emission most likely associated with ZnO excitonic transition was observed up to 370 degrees C. The results show the potential of ZnO-based materials for UV emitters of potentially lower cost and with comparable or higher emission intensity than comparable AlGaN/GaN devices.

    Journal Title

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers

    Volume

    44

    Issue/Number

    10

    Publication Date

    1-1-2005

    Document Type

    Article

    Language

    English

    First Page

    7296

    Last Page

    7300

    WOS Identifier

    WOS:000232739300019

    ISSN

    0021-4922

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