Growth and optical properties of ultra-long single-crystalline alpha-Si3N4 nanobelts
Abbreviated Journal Title
Appl. Phys. A-Mater. Sci. Process.
SILICON-NITRIDE; THIN-FILMS; PHOTOLUMINESCENCE; NANOWIRES; SI; OXYNITRIDE; CERAMICS; NANORODS; SI3N4; Materials Science, Multidisciplinary; Physics, Applied
Ultra-long single-crystalline alpha-Si3N4 nanobelts were synthesized by catalyst-assisted crystallization of polymer-derived amorphous silicon carbonitride (SiCN). The obtained nanobelts were characterized using X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy and selected-area electron diffraction. The results revealed that the alpha-Si3N4 nanobelts are 20 to 40 nm in thickness, 400 - 600 nm in width and a few hundreds of micrometers to several millimeters in length, and grow along either the [ 011] or the [ 100] direction. Intense visible photoluminescence was observed over a spectrum ranging from 1.65 to 3.01 eV, which can be attributed to defects in the alpha-Si3N4 structure.
Applied Physics a-Materials Science & Processing
"Growth and optical properties of ultra-long single-crystalline alpha-Si3N4 nanobelts" (2005). Faculty Bibliography 2000s. 5801.