Growth and optical properties of ultra-long single-crystalline alpha-Si3N4 nanobelts

    Authors

    W. Yang; L. Zhang; Z. Xie; J. Li; H. Miao;L. An

    Comments

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    Abbreviated Journal Title

    Appl. Phys. A-Mater. Sci. Process.

    Keywords

    SILICON-NITRIDE; THIN-FILMS; PHOTOLUMINESCENCE; NANOWIRES; SI; OXYNITRIDE; CERAMICS; NANORODS; SI3N4; Materials Science, Multidisciplinary; Physics, Applied

    Abstract

    Ultra-long single-crystalline alpha-Si3N4 nanobelts were synthesized by catalyst-assisted crystallization of polymer-derived amorphous silicon carbonitride (SiCN). The obtained nanobelts were characterized using X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy and selected-area electron diffraction. The results revealed that the alpha-Si3N4 nanobelts are 20 to 40 nm in thickness, 400 - 600 nm in width and a few hundreds of micrometers to several millimeters in length, and grow along either the [ 011] or the [ 100] direction. Intense visible photoluminescence was observed over a spectrum ranging from 1.65 to 3.01 eV, which can be attributed to defects in the alpha-Si3N4 structure.

    Journal Title

    Applied Physics a-Materials Science & Processing

    Volume

    80

    Issue/Number

    7

    Publication Date

    1-1-2005

    Document Type

    Article

    Language

    English

    First Page

    1419

    Last Page

    1423

    WOS Identifier

    WOS:000227908400007

    ISSN

    0947-8396

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