MOS reliability subject to dynamic voltage stress - Modeling and analysis
Abbreviated Journal Title
IEEE Trans. Electron Devices
breakdown (BD); circuit reliability; hot carriers (HCs); MOS devices; power amplifiers; stress; ELECTRICAL STRESS; BREAKDOWN; DEGRADATION; OXIDE; PERFORMANCE; MOSFETS; LIFETIME; BEHAVIOR; AC; Engineering, Electrical & Electronic; Physics, Applied
Dynamic stress on MOSFETs with 900-MHz inverter-like waveforms as well as static (or dc) stress were evaluated experimentally. It showed that the degradation due to dynamic stress is less than that of do stress for our test transistors. A compact model is used to evaluate the degradation in radio frequency performances, such as transconductance, cutoff frequency, linearity, and noise figure. A class-AB power amplifier is presented as an example to demonstrate the effect of dynamic stress on RF circuit performance.
Ieee Transactions on Electron Devices
"MOS reliability subject to dynamic voltage stress - Modeling and analysis" (2005). Faculty Bibliography 2000s. 5818.