MOS reliability subject to dynamic voltage stress - Modeling and analysis

    Authors

    C. Z. Yu;J. S. Yuan

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    breakdown (BD); circuit reliability; hot carriers (HCs); MOS devices; power amplifiers; stress; ELECTRICAL STRESS; BREAKDOWN; DEGRADATION; OXIDE; PERFORMANCE; MOSFETS; LIFETIME; BEHAVIOR; AC; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    Dynamic stress on MOSFETs with 900-MHz inverter-like waveforms as well as static (or dc) stress were evaluated experimentally. It showed that the degradation due to dynamic stress is less than that of do stress for our test transistors. A compact model is used to evaluate the degradation in radio frequency performances, such as transconductance, cutoff frequency, linearity, and noise figure. A class-AB power amplifier is presented as an example to demonstrate the effect of dynamic stress on RF circuit performance.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    52

    Issue/Number

    8

    Publication Date

    1-1-2005

    Document Type

    Article

    Language

    English

    First Page

    1751

    Last Page

    1758

    WOS Identifier

    WOS:000230802200011

    ISSN

    0018-9383

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