Title

MOS reliability subject to dynamic voltage stress - Modeling and analysis

Authors

Authors

C. Z. Yu;J. S. Yuan

Comments

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Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

breakdown (BD); circuit reliability; hot carriers (HCs); MOS devices; power amplifiers; stress; ELECTRICAL STRESS; BREAKDOWN; DEGRADATION; OXIDE; PERFORMANCE; MOSFETS; LIFETIME; BEHAVIOR; AC; Engineering, Electrical & Electronic; Physics, Applied

Abstract

Dynamic stress on MOSFETs with 900-MHz inverter-like waveforms as well as static (or dc) stress were evaluated experimentally. It showed that the degradation due to dynamic stress is less than that of do stress for our test transistors. A compact model is used to evaluate the degradation in radio frequency performances, such as transconductance, cutoff frequency, linearity, and noise figure. A class-AB power amplifier is presented as an example to demonstrate the effect of dynamic stress on RF circuit performance.

Journal Title

Ieee Transactions on Electron Devices

Volume

52

Issue/Number

8

Publication Date

1-1-2005

Document Type

Article

Language

English

First Page

1751

Last Page

1758

WOS Identifier

WOS:000230802200011

ISSN

0018-9383

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