A new model for four-terminal junction field-effect transistors
Abbreviated Journal Title
field effect transistors; analog circuit; compact modeling; FET; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
This paper presents a compact and semi-empirical model for a four-terminal (independent top and bottom gates) junction field-effect transistor (JFET). The model describes the steady-state characteristics for all bias conditions with a unified equation. Moreover, the model provides a high degree of accuracy and continuity for the different operation regions, a critical factor for robust analog circuit simulations. Capacitance modeling is also included to describe the JFET small-signal behavior. The model has been implemented in Cadence framework via Verilog-A and compared with data measured from JFETs used at Texas Instruments. (c) 2006 Elsevier Ltd. All rights reserved.
"A new model for four-terminal junction field-effect transistors" (2006). Faculty Bibliography 2000s. 6083.