Kinetics of OH chemiluminescence in the presence of silicon
Abbreviated Journal Title
Chem. Phys. Lett.
GAS-PHASE; COMBUSTION; Chemistry, Physical; Physics, Atomic, Molecular & Chemical
Ultraviolet emission from the OH(A-X) transition near 307 nm has been measured in a shock-tube for T = 1050-1400 K and P approximate to 1.2 atm. Experimental mixtures of H-2/SiH4/O-2/Ar and kinetics calculations were used to identify the elementary reaction forming electronically excited OH (OH*) in a Si-containing environment and directly measure its absolute rate coefficient. The primary Si-containing reaction found to form OH* is SiH + O-2 = OH* + SiO with a rate expression of k(0) = 1.5 x 10(7) exp(+16.4 kcal/RT) +/- 2.3 x 10(10) cm(3) mol(-1) s(-1) This work provides insights into the mechanisms of combustion processes involving silicon. (c) 2006 Elsevier B.V. All rights reserved.
Chemical Physics Letters
"Kinetics of OH chemiluminescence in the presence of silicon" (2006). Faculty Bibliography 2000s. 6196.