Title

Kinetics of OH chemiluminescence in the presence of silicon

Authors

Authors

J. M. Hall; S. Reehal;E. L. Petersen

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Chem. Phys. Lett.

Keywords

GAS-PHASE; COMBUSTION; Chemistry, Physical; Physics, Atomic, Molecular & Chemical

Abstract

Ultraviolet emission from the OH(A-X) transition near 307 nm has been measured in a shock-tube for T = 1050-1400 K and P approximate to 1.2 atm. Experimental mixtures of H-2/SiH4/O-2/Ar and kinetics calculations were used to identify the elementary reaction forming electronically excited OH (OH*) in a Si-containing environment and directly measure its absolute rate coefficient. The primary Si-containing reaction found to form OH* is SiH + O-2 = OH* + SiO with a rate expression of k(0) = 1.5 x 10(7) exp(+16.4 kcal/RT) +/- 2.3 x 10(10) cm(3) mol(-1) s(-1) This work provides insights into the mechanisms of combustion processes involving silicon. (c) 2006 Elsevier B.V. All rights reserved.

Journal Title

Chemical Physics Letters

Volume

425

Issue/Number

4-6

Publication Date

1-1-2006

Document Type

Article

Language

English

First Page

229

Last Page

233

WOS Identifier

WOS:000238799200011

ISSN

0009-2614

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