Integrating semiconductor device characterisation and reliability into electrical engineering education
Abbreviated Journal Title
Int. J. Elec. Eng. Educ.
reliability testing; semiconductor device characterisation; semiconductor device fabrication; semiconductor device reliability; DEPENDENT DIELECTRIC-BREAKDOWN; GATE OXIDE; MODEL; Education, Scientific Disciplines; Engineering, Electrical & Electronic
Semiconductor device reliability physics and testing have been successfully integrated into a semiconductor device fabrication course as supplementary contents, to embody more comprehensively the challenges and concerns of the semiconductor industry. In the semiconductor device fabrication class, students are exposed not only to the theory of basic processing techniques of integrated circuit fabrication, but also to the reliability issues arising from device scaling, such as hot carrier effect and time-dependent dielectric breakdown in MOS transistors. By adding reliability theory and testing, students will find the course more interesting and stimulating. They not only grasp measurement techniques, but also gain insight into device reliability. This helps them for job hunting or pursuing advanced education or research.
International Journal of Electrical Engineering Education
"Integrating semiconductor device characterisation and reliability into electrical engineering education" (2006). Faculty Bibliography 2000s. 6749.