Title

Integrating semiconductor device characterisation and reliability into electrical engineering education

Authors

Authors

J. S. Yuan;H. Yang

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Int. J. Elec. Eng. Educ.

Keywords

reliability testing; semiconductor device characterisation; semiconductor device fabrication; semiconductor device reliability; DEPENDENT DIELECTRIC-BREAKDOWN; GATE OXIDE; MODEL; Education, Scientific Disciplines; Engineering, Electrical & Electronic

Abstract

Semiconductor device reliability physics and testing have been successfully integrated into a semiconductor device fabrication course as supplementary contents, to embody more comprehensively the challenges and concerns of the semiconductor industry. In the semiconductor device fabrication class, students are exposed not only to the theory of basic processing techniques of integrated circuit fabrication, but also to the reliability issues arising from device scaling, such as hot carrier effect and time-dependent dielectric breakdown in MOS transistors. By adding reliability theory and testing, students will find the course more interesting and stimulating. They not only grasp measurement techniques, but also gain insight into device reliability. This helps them for job hunting or pursuing advanced education or research.

Journal Title

International Journal of Electrical Engineering Education

Volume

43

Issue/Number

1

Publication Date

1-1-2006

Document Type

Article

Language

English

First Page

67

Last Page

79

WOS Identifier

WOS:000236621000006

ISSN

0020-7209

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