Integrating semiconductor device characterisation and reliability into electrical engineering education

    Authors

    J. S. Yuan;H. Yang

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Int. J. Elec. Eng. Educ.

    Keywords

    reliability testing; semiconductor device characterisation; semiconductor device fabrication; semiconductor device reliability; DEPENDENT DIELECTRIC-BREAKDOWN; GATE OXIDE; MODEL; Education, Scientific Disciplines; Engineering, Electrical & Electronic

    Abstract

    Semiconductor device reliability physics and testing have been successfully integrated into a semiconductor device fabrication course as supplementary contents, to embody more comprehensively the challenges and concerns of the semiconductor industry. In the semiconductor device fabrication class, students are exposed not only to the theory of basic processing techniques of integrated circuit fabrication, but also to the reliability issues arising from device scaling, such as hot carrier effect and time-dependent dielectric breakdown in MOS transistors. By adding reliability theory and testing, students will find the course more interesting and stimulating. They not only grasp measurement techniques, but also gain insight into device reliability. This helps them for job hunting or pursuing advanced education or research.

    Journal Title

    International Journal of Electrical Engineering Education

    Volume

    43

    Issue/Number

    1

    Publication Date

    1-1-2006

    Document Type

    Article

    Language

    English

    First Page

    67

    Last Page

    79

    WOS Identifier

    WOS:000236621000006

    ISSN

    0020-7209

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