Title

Thermal stability of CdZnO/ZnO multi-quantum-wells

Authors

Authors

A. V. Thompson; C. Boutwell; J. W. Mares; W. V. Schoenfeld; A. Osinsky; B. Hertog; J. Q. Xie; S. J. Pearton;D. P. Norton

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

ALLOY-FILMS; BAND-GAP; ZNO; MGXZN1-XO; EPITAXY; GROWTH; DIODES; Physics, Applied

Abstract

The thermal stability of CdZnO/ZnO multi-quantum-well (MQW) structures was studied using rapid thermal annealing in nitrogen from 300 to 750 degrees C. Photoluminescence (PL) emission from the MQWs was studied while varying the annealing temperature and time. For 15 min annealings, the PL center wavelength showed a 7 nm reduction for temperatures up to 650 degrees C. Above 650 degrees C, the wavelength changed rapidly, with a 50 nm reduction at 750 degrees C. Annealing at 700 degrees C for up to 20 min produced a systematic reduction in PL wavelength up to 39 nm. The data suggest that CdZnO/ZnO MQWs are relatively stable for nitrogen annealing below 650 degrees C for times up to 15 min. (c) 2007 American Institute of Physics.

Journal Title

Applied Physics Letters

Volume

91

Issue/Number

20

Publication Date

1-1-2007

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000251003500044

ISSN

0003-6951

Share

COinS