Thermal stability of CdZnO/ZnO multi-quantum-wells
Abbreviated Journal Title
Appl. Phys. Lett.
ALLOY-FILMS; BAND-GAP; ZNO; MGXZN1-XO; EPITAXY; GROWTH; DIODES; Physics, Applied
The thermal stability of CdZnO/ZnO multi-quantum-well (MQW) structures was studied using rapid thermal annealing in nitrogen from 300 to 750 degrees C. Photoluminescence (PL) emission from the MQWs was studied while varying the annealing temperature and time. For 15 min annealings, the PL center wavelength showed a 7 nm reduction for temperatures up to 650 degrees C. Above 650 degrees C, the wavelength changed rapidly, with a 50 nm reduction at 750 degrees C. Annealing at 700 degrees C for up to 20 min produced a systematic reduction in PL wavelength up to 39 nm. The data suggest that CdZnO/ZnO MQWs are relatively stable for nitrogen annealing below 650 degrees C for times up to 15 min. (c) 2007 American Institute of Physics.
Applied Physics Letters
"Thermal stability of CdZnO/ZnO multi-quantum-wells" (2007). Faculty Bibliography 2000s. 7715.