Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
LOW-FREQUENCY NOISE; P-N-JUNCTIONS; DIODES; BEHAVIOR; IMPACT; Physics, Applied
Abstract
The low-frequency noise of shallow germanium p(+)-n junctions is studied, for diodes with or without a nickel-germanide Ohmic contact. It is shown that the application of NiGe not only reduces the series resistance, resulting in a higher forward current, but also results in a lower 1/f noise at forward bias. From the observed geometry dependence, it is concluded that germanidation suppresses the 1/f noise generated in the series resistance, leaving surface-state-assisted generation-recombination at the junction perimeter as the dominant flicker noise source.
Journal Title
Applied Physics Letters
Volume
90
Issue/Number
4
Publication Date
1-1-2007
Document Type
Article
DOI Link
Language
English
First Page
3
WOS Identifier
ISSN
0003-6951
Recommended Citation
Todi, R. M.; Sonde, S.; Simoen, E.; Claeys, C.; and Sundaram, K. B., "On the origin of the 1/f noise in shallow germanium p(+)-n junctions" (2007). Faculty Bibliography 2000s. 7717.
https://stars.library.ucf.edu/facultybib2000/7717
Comments
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