In situ high temperature electrical characterization of RF sputtered SiCBN thin films
Abbreviated Journal Title
J. Electrochem. Soc.
RAY PHOTOELECTRON-SPECTROSCOPY; C-N FILMS; SI-(B-)C-N CERAMICS; VOLTAGE; SENSORS; STATE; XPS; Electrochemistry; Materials Science, Coatings & Films
Electrical properties of reactively sputtered SiCBN thin films were studied at high temperature conditions. In situ electrical characterization was performed through sheet resistance measurements in the temperature range from room temperature to 900 degrees C. The electrical properties were observed to be extremely sensitive with respect to variations in the chemical composition, and bonding structure of the SiCBN films. The film stoichiometry, obtained with no N-2 gas flow, showed very interesting electrical characteristics that have been correlated with the chemical structure of the material. Multiple heating and cooling cycles show uniquely stable resistance readings. This is presumed to be due to the formation of a stable surface passivation oxide layer leaving the bulk of the thin film unaffected. This was further confirmed through secondary ion mass spectroscopy depth profile. The thermal stability and stable reproducible electrical properties indicate potential for low cost high temperature thin film applications. (c) 2007 The Electrochemical Society.
Journal of the Electrochemical Society
"In situ high temperature electrical characterization of RF sputtered SiCBN thin films" (2007). Faculty Bibliography 2000s. 7751.