In situ high temperature electrical characterization of RF sputtered SiCBN thin films

    Authors

    A. Vijayakumar; R. M. Todi; V. O. Todi;K. B. Sundaram

    Comments

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    Abbreviated Journal Title

    J. Electrochem. Soc.

    Keywords

    RAY PHOTOELECTRON-SPECTROSCOPY; C-N FILMS; SI-(B-)C-N CERAMICS; VOLTAGE; SENSORS; STATE; XPS; Electrochemistry; Materials Science, Coatings & Films

    Abstract

    Electrical properties of reactively sputtered SiCBN thin films were studied at high temperature conditions. In situ electrical characterization was performed through sheet resistance measurements in the temperature range from room temperature to 900 degrees C. The electrical properties were observed to be extremely sensitive with respect to variations in the chemical composition, and bonding structure of the SiCBN films. The film stoichiometry, obtained with no N-2 gas flow, showed very interesting electrical characteristics that have been correlated with the chemical structure of the material. Multiple heating and cooling cycles show uniquely stable resistance readings. This is presumed to be due to the formation of a stable surface passivation oxide layer leaving the bulk of the thin film unaffected. This was further confirmed through secondary ion mass spectroscopy depth profile. The thermal stability and stable reproducible electrical properties indicate potential for low cost high temperature thin film applications. (c) 2007 The Electrochemical Society.

    Journal Title

    Journal of the Electrochemical Society

    Volume

    154

    Issue/Number

    10

    Publication Date

    1-1-2007

    Document Type

    Article

    Language

    English

    First Page

    H875

    Last Page

    H878

    WOS Identifier

    WOS:000248984700067

    ISSN

    0013-4651

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