Title
Semiconductor devices for RF applications: evolution and current status
Abbreviated Journal Title
Microelectron. Reliab.
Keywords
HETEROJUNCTION BIPOLAR-TRANSISTORS; FIELD-EFFECT TRANSISTOR; SILICON-CARBIDE MESFETS; HIGH-POWER; GAAS-MESFETS; BASE CURRENT; GHZ; F(MAX); PERFORMANCE; GATE; HEMTS; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
Abstract
This paper reviews the history, evolution, current status, and applications of semiconductor devices for radio frequency (RF) applications. The most important developments and major milestones leading to modern high-performance RF transistors are presented. Heterostructures, which are key elements for some advanced RF transistors, are described, and an overview of the different transistor types and their figures of merit is given. Applications of RF transistors in civil RF systems with special emphasis on wireless communication systems are addressed, and the issues of transistor reliability are also briefly discussed. (C) 2001 Elsevier Science Ltd. All rights reserved.
Journal Title
Microelectronics Reliability
Volume
41
Issue/Number
2
Publication Date
1-1-2001
Document Type
Article
Language
English
First Page
145
Last Page
168
WOS Identifier
ISSN
0026-2714
Recommended Citation
"Semiconductor devices for RF applications: evolution and current status" (2001). Faculty Bibliography 2000s. 8208.
https://stars.library.ucf.edu/facultybib2000/8208