Semiconductor devices for RF applications: evolution and current status

    Authors

    F. Schwierz;J. J. Liou

    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    HETEROJUNCTION BIPOLAR-TRANSISTORS; FIELD-EFFECT TRANSISTOR; SILICON-CARBIDE MESFETS; HIGH-POWER; GAAS-MESFETS; BASE CURRENT; GHZ; F(MAX); PERFORMANCE; GATE; HEMTS; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    This paper reviews the history, evolution, current status, and applications of semiconductor devices for radio frequency (RF) applications. The most important developments and major milestones leading to modern high-performance RF transistors are presented. Heterostructures, which are key elements for some advanced RF transistors, are described, and an overview of the different transistor types and their figures of merit is given. Applications of RF transistors in civil RF systems with special emphasis on wireless communication systems are addressed, and the issues of transistor reliability are also briefly discussed. (C) 2001 Elsevier Science Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    41

    Issue/Number

    2

    Publication Date

    1-1-2001

    Document Type

    Article

    Language

    English

    First Page

    145

    Last Page

    168

    WOS Identifier

    WOS:000166889100001

    ISSN

    0026-2714

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