Laser conversion of electrical properties for silicon carbide device applications
Abbreviated Journal Title
J. Laser Appl.
laser processing; annealing; globules; conducting and insulating phases; silicon carbide; high temperature device; direct writing; ELECTRONICS; Materials Science, Multidisciplinary; Optics; Physics, Applied
A direct conversion technique has been demonstrated to produce highly conductive tracks on silicon carbide by irradiating it with a laser beam. It is found that laser irradiation of insulating silicon carbide substrates decreases its resistivity from 10(11) to 10(-4) Ohm cm. Scanning electron microscopy of laser-irradiated alpha -silicon carbide substrate reveals dispersed globules on the irradiated track. The atomic force microscopic images of the tracks indicate the conversion of larger structures into smaller, more round-shaped structures suggesting the formation of globules. However, laser irradiation of silicon carbide conductors in the presence of pure oxygen transforms the conducting track into an insulator. The effect of annealing on the electrical properties of the laser-generated conducting tracks is also examined. This technique provides a means of directly writing conducting and insulating tracks on silicon carbide to produce electronic devices for high temperature applications. (C) 2001 Laser Institute of America.
Journal of Laser Applications
"Laser conversion of electrical properties for silicon carbide device applications" (2001). Faculty Bibliography 2000s. 8212.