Laser conversion of electrical properties for silicon carbide device applications

    Authors

    D. K. Sengupta; N. R. Quick;A. Kar

    Abbreviated Journal Title

    J. Laser Appl.

    Keywords

    laser processing; annealing; globules; conducting and insulating phases; silicon carbide; high temperature device; direct writing; ELECTRONICS; Materials Science, Multidisciplinary; Optics; Physics, Applied

    Abstract

    A direct conversion technique has been demonstrated to produce highly conductive tracks on silicon carbide by irradiating it with a laser beam. It is found that laser irradiation of insulating silicon carbide substrates decreases its resistivity from 10(11) to 10(-4) Ohm cm. Scanning electron microscopy of laser-irradiated alpha -silicon carbide substrate reveals dispersed globules on the irradiated track. The atomic force microscopic images of the tracks indicate the conversion of larger structures into smaller, more round-shaped structures suggesting the formation of globules. However, laser irradiation of silicon carbide conductors in the presence of pure oxygen transforms the conducting track into an insulator. The effect of annealing on the electrical properties of the laser-generated conducting tracks is also examined. This technique provides a means of directly writing conducting and insulating tracks on silicon carbide to produce electronic devices for high temperature applications. (C) 2001 Laser Institute of America.

    Journal Title

    Journal of Laser Applications

    Volume

    13

    Issue/Number

    1

    Publication Date

    1-1-2001

    Document Type

    Article

    Language

    English

    First Page

    26

    Last Page

    31

    WOS Identifier

    WOS:000166923300005

    ISSN

    1042-346X

    Share

    COinS