Title

Recent progress in parallel fabrication of individual single walled carbon nanotube devices using dielectrophoresis

Authors

Authors

M. R. Islam;S. I. Khondaker

Comments

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Abbreviated Journal Title

Mater. Express

Keywords

Carbon Nanotubes; Solution Processed; Dielectrophoresis; Transistors; Parallel Fabrication; FIELD-EFFECT TRANSISTORS; DENSITY GRADIENT ULTRACENTRIFUGATION; THIN-FILM TRANSISTORS; AC ELECTRIC-FIELD; ALIGNED ARRAYS; PHONON-SCATTERING; SOLAR-CELLS; PERFORMANCE; DIAMETER; INTEGRATION; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary

Abstract

Single walled carbon nanotubes (SWNTs) have attracted immense research interest because of their remarkable physical and electronic properties. In particular, electronic devices fabricated using individual SWNT have shown outstanding device performance surpassing those of Si. However, for the widespread application of SWNTs based electronic devices, parallel fabrication techniques along with Complementary Metal Oxide (CMOS) compatibility are required. One technique that has the potential to integrate SWNTs at the selected position of the circuit in a parallel fashion is AC dielectrophoresis (DEP). In this paper, we review recent progress in the parallel fabrication of SWNT-based devices using DEP. The review begins with a theoretical background for the DEP and then discusses various parameters affecting DEP assembly of SWNTs. We also review the electronic transport properties of the DEP assembled devices and show that high performance devices can be fabricated using DEP. The technique for fabricating all semiconducting field effect transistor using DEP is also reviewed. Finally, we discuss the challenges and opportunities for the DEP assembly of SWNTs.

Journal Title

Materials Express

Volume

4

Issue/Number

4

Publication Date

1-1-2014

Document Type

Review

Language

English

First Page

263

Last Page

278

WOS Identifier

WOS:000339420900001

ISSN

2158-5849

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