An Explicit Surface Potential Calculation and Compact Current Model for AlGaN/GaN HEMTs
Abbreviated Journal Title
IEEE Electron Device Lett.
AlGaN/GaN high-electron mobility transistor (HEMT); drain current; compact model; self-heating effect; MODFETS; DEVICES; Engineering, Electrical & Electronic
In this letter, a new compact model for the AlGaN/GaN high-electron mobility transistors developed based on explicit solutions to the Fermi level and the surface potential is presented. Its simple calculation and high accuracy in predicting the surface potential and current-voltage characteristics make the model ideal for circuit simulation applications. This surface-potential-based compact model accounts for the self-heating effect by considering the temperature-dependent free-carrier mobility. The model is verified against numerical results and measured data under a wide range of bias conditions.
Ieee Electron Device Letters
"An Explicit Surface Potential Calculation and Compact Current Model for AlGaN/GaN HEMTs" (2015). Faculty Bibliography 2010s. 6499.