An Explicit Surface Potential Calculation and Compact Current Model for AlGaN/GaN HEMTs

    Authors

    W. L. Deng; J. K. Huang; X. Y. Ma;J. J. Liou

    Comments

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    Abbreviated Journal Title

    IEEE Electron Device Lett.

    Keywords

    AlGaN/GaN high-electron mobility transistor (HEMT); drain current; compact model; self-heating effect; MODFETS; DEVICES; Engineering, Electrical & Electronic

    Abstract

    In this letter, a new compact model for the AlGaN/GaN high-electron mobility transistors developed based on explicit solutions to the Fermi level and the surface potential is presented. Its simple calculation and high accuracy in predicting the surface potential and current-voltage characteristics make the model ideal for circuit simulation applications. This surface-potential-based compact model accounts for the self-heating effect by considering the temperature-dependent free-carrier mobility. The model is verified against numerical results and measured data under a wide range of bias conditions.

    Journal Title

    Ieee Electron Device Letters

    Volume

    36

    Issue/Number

    2

    Publication Date

    1-1-2015

    Document Type

    Article

    Language

    English

    First Page

    108

    Last Page

    110

    WOS Identifier

    WOS:000350334100008

    ISSN

    0741-3106

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