Title
An Explicit Surface Potential Calculation and Compact Current Model for AlGaN/GaN HEMTs
Abbreviated Journal Title
IEEE Electron Device Lett.
Keywords
AlGaN/GaN high-electron mobility transistor (HEMT); drain current; compact model; self-heating effect; MODFETS; DEVICES; Engineering, Electrical & Electronic
Abstract
In this letter, a new compact model for the AlGaN/GaN high-electron mobility transistors developed based on explicit solutions to the Fermi level and the surface potential is presented. Its simple calculation and high accuracy in predicting the surface potential and current-voltage characteristics make the model ideal for circuit simulation applications. This surface-potential-based compact model accounts for the self-heating effect by considering the temperature-dependent free-carrier mobility. The model is verified against numerical results and measured data under a wide range of bias conditions.
Journal Title
Ieee Electron Device Letters
Volume
36
Issue/Number
2
Publication Date
1-1-2015
Document Type
Article
Language
English
First Page
108
Last Page
110
WOS Identifier
ISSN
0741-3106
Recommended Citation
"An Explicit Surface Potential Calculation and Compact Current Model for AlGaN/GaN HEMTs" (2015). Faculty Bibliography 2010s. 6499.
https://stars.library.ucf.edu/facultybib2010/6499
Comments
Authors: contact us about adding a copy of your work at STARS@ucf.edu