Title

A Two-Dimensional Model For Emitter Base Junction Capacitance Of Bipolar-Transistors

Comments

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Abbreviated Journal Title

Hispania-J. Devoted Teach. Span. Port.

Keywords

Engineering; Electrical & Electronic; Physics; Applied; Physics; Condensed Matter

Abstract

A two-dimensional quasi-static capacitance model for the emitter-base space-charge region of bipolar junction transistors is presented. The model includes two-dimensional geometry effects and ohmic drops in the quasineutral emitter and base regions. It describes the capacitance for all voltages, and applies to exponential-constant doping profiles, the two extremes of which are step junction and linear-graded junction profiles. Comparison of the present model and a conventional planar capacitance model is included. The present model is also implemented in SLICE circuit simulator, and the resulting transient response is compared with that obtained from a 2-D device simulator PISCES to assess the effects of the present model on bipolar transistor circuit simulation.

Journal Title

Hispania-a Journal Devoted to the Teaching of Spanish and Portuguese

Volume

31

Issue/Number

10

Publication Date

1-1-1988

Document Type

Article

Language

English

First Page

1541

Last Page

1549

WOS Identifier

WOS:A1988Q894000012

ISSN

0038-1101

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