Title
1/F Optimization For A Complementary Metal-Oxide Semiconductor Focal Plane Array Input Circuit
Abbreviated Journal Title
Am. Sch.
Keywords
Optics
Abstract
In electro-optical detector systems, the noise characteristics of transresistance amplifiers are sensitive to the incremental conductivity of the photovoltaic detector. In this paper we show that the 1/f noise corner frequency contributed to the noise by the amplifier is a function of the bias applied to the detector. The 1/f noise corner frequency of the diode in cooled focal plane arrays is also a function of the reverse bias, but there is an optimum reverse bias that is not 0 V. This fact becomes important when it is necessary to use complementary metal oxide semiconductor amplifiers that have lame 1/f noise corner frequencies.
Journal Title
American Scholar
Volume
27
Issue/Number
3
Publication Date
1-1-1988
Document Type
Article
DOI Link
Language
English
First Page
246
Last Page
249
WOS Identifier
ISSN
0091-3286
Recommended Citation
Martin, R. J. and Herzog, W. R., "1/F Optimization For A Complementary Metal-Oxide Semiconductor Focal Plane Array Input Circuit" (1988). Faculty Bibliography 1980s. 664.
https://stars.library.ucf.edu/facultybib1980/664
Comments
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