Title

A Physics-Based Current-Dependent Base Resistance Model For Advanced Bipolar Transistors

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

Engineering; Electrical & Electronic; Physics; Applied

Abstract

A physics-based current-dependent base resistance model has been developed that includes physical mechanisms such as base-width modulation, base-conductivity modulation, phase pushout, and emitter current crowding. It describes the current-dependent characteristics of the base resistance for all injection levels. A two-dimensional device simulator, PISCES, is used to justify the underlying physics. The predictions of the model show good agreement with results of measurements and device simulations. The model has been implemented in SPICE.

Journal Title

IEEE Transactions on Electron Devices

Volume

35

Issue/Number

7

Publication Date

1-1-1988

Document Type

Article

DOI Link

10.1109/16.3364

Language

English

First Page

1055

Last Page

1062

WOS Identifier

WOS:A1988P018600035

ISSN

0018-9383

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