Title
A Physics-Based Current-Dependent Base Resistance Model For Advanced Bipolar Transistors
Abbreviated Journal Title
IEEE Trans. Electron Devices
Keywords
Engineering; Electrical & Electronic; Physics; Applied
Abstract
A physics-based current-dependent base resistance model has been developed that includes physical mechanisms such as base-width modulation, base-conductivity modulation, phase pushout, and emitter current crowding. It describes the current-dependent characteristics of the base resistance for all injection levels. A two-dimensional device simulator, PISCES, is used to justify the underlying physics. The predictions of the model show good agreement with results of measurements and device simulations. The model has been implemented in SPICE.
Journal Title
IEEE Transactions on Electron Devices
Volume
35
Issue/Number
7
Publication Date
1-1-1988
Document Type
Article
DOI Link
Language
English
First Page
1055
Last Page
1062
WOS Identifier
ISSN
0018-9383
Recommended Citation
Yuan, J. S.; Liou, J. J.; and Eisenstadt, W. R., "A Physics-Based Current-Dependent Base Resistance Model For Advanced Bipolar Transistors" (1988). Faculty Bibliography 1980s. 725.
https://stars.library.ucf.edu/facultybib1980/725
Comments
Authors: contact us about adding a copy of your work at STARS@ucf.edu