Theoretical-Study Of Forward-Voltage Heterojunction Space-Charge-Region Capacitance Including Interface-State Effects
Abbreviated Journal Title
Phys. Status Solidi A-Appl. Res.
Materials Science; Multidisciplinary; Physics; Applied; Physics; Condensed Matter
The potential barrier heights, thickness, and capacitance of abrupt heterojunction space‐charge regions under forward voltages are treated analytically, and a model for this is developed. Physical effects such as free‐carrier charges and interface states in the heterojunction space‐charge region are considered. Comparison of the present model and other models for a Gaas/Si heterojunction diode is included. Experimental aspects regarding the heterojunction capacitance are also briefly discussed.
Physica Status Solidi a-Applied Research
Liou, J. J., "Theoretical-Study Of Forward-Voltage Heterojunction Space-Charge-Region Capacitance Including Interface-State Effects" (1989). Faculty Bibliography 1980s. 797.