Title

Modeling The Non-Quasi-Static Metal-Semiconductor Space-Charge-Region Capacitance

Comments

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Abbreviated Journal Title

J. Appl. Phys.

Keywords

Physics; Applied; Spectroscopy; semiconductors

Abstract

A non‐quasi‐static (frequency‐dependent) space‐charge‐region capacitance model for metal‐semiconductor junctions is developed. The model includes free‐carrier charge effects in the space‐charge region and is not based on the quasi‐static approximation that assumes infinite free‐carrier velocity and thus zero delay time in the space‐charge region. Comparison between the conventional quasi‐static depletion model and the present model is included, and susceptances measured from a differential voltage technique for a NiSi2 ‐nSi diode and from a phase spectroscopy method for a Pd‐nGaAs diode are used to assess the accuracy of the model.

Journal Title

Journal of Applied Physics

Volume

65

Issue/Number

4

Publication Date

1-1-1989

Document Type

Article

Language

English

First Page

1782

Last Page

1787

WOS Identifier

WOS:A1989T081800065

ISSN

0021-8979

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