Title
Analytical Base-Collector Heterojunction Capacitance Model Including Collector Current Effects
Abbreviated Journal Title
J. Appl. Phys.
Keywords
Physics; Applied
Abstract
The base‐collector heterojunction space‐charge‐region capacitance of double heterojunction bipolar transistors is treated. This capacitance cannot be modeled as the conventional heterojunction depletion capacitance because it is heavily influenced by the collector current, which is neglected in the depletion capacitance model. The analysis includes heterojunction effects as well as high current phenomena such as base pushout and space‐charge‐limited flow. Large discrepancies are found when comparing the present model with the depletion model at high current densities. Comparison of the base‐collector junction capacitances calculated from a single heterojunction bipolar transistor and a double heterojunction bipolar transistor is also included.
Journal Title
Journal of Applied Physics
Volume
66
Issue/Number
1
Publication Date
1-1-1989
Document Type
Article
DOI Link
Language
English
First Page
286
Last Page
291
WOS Identifier
ISSN
0021-8979
Recommended Citation
Liou, J. J., "Analytical Base-Collector Heterojunction Capacitance Model Including Collector Current Effects" (1989). Faculty Bibliography 1980s. 799.
https://stars.library.ucf.edu/facultybib1980/799
Comments
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