Title

Analytical Base-Collector Heterojunction Capacitance Model Including Collector Current Effects

Comments

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Abbreviated Journal Title

J. Appl. Phys.

Keywords

Physics; Applied

Abstract

The base‐collector heterojunction space‐charge‐region capacitance of double heterojunction bipolar transistors is treated. This capacitance cannot be modeled as the conventional heterojunction depletion capacitance because it is heavily influenced by the collector current, which is neglected in the depletion capacitance model. The analysis includes heterojunction effects as well as high current phenomena such as base pushout and space‐charge‐limited flow. Large discrepancies are found when comparing the present model with the depletion model at high current densities. Comparison of the base‐collector junction capacitances calculated from a single heterojunction bipolar transistor and a double heterojunction bipolar transistor is also included.

Journal Title

Journal of Applied Physics

Volume

66

Issue/Number

1

Publication Date

1-1-1989

Document Type

Article

Language

English

First Page

286

Last Page

291

WOS Identifier

WOS:A1989AA25600048

ISSN

0021-8979

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