Modeling The Non-Quasi-Static Metal-Semiconductor Space-Charge-Region Capacitance
Abbreviated Journal Title
J. Appl. Phys.
Physics; Applied; Spectroscopy; semiconductors
A non‐quasi‐static (frequency‐dependent) space‐charge‐region capacitance model for metal‐semiconductor junctions is developed. The model includes free‐carrier charge effects in the space‐charge region and is not based on the quasi‐static approximation that assumes infinite free‐carrier velocity and thus zero delay time in the space‐charge region. Comparison between the conventional quasi‐static depletion model and the present model is included, and susceptances measured from a differential voltage technique for a NiSi2 ‐nSi diode and from a phase spectroscopy method for a Pd‐nGaAs diode are used to assess the accuracy of the model.
Journal of Applied Physics
Liou, J. J. and Malocha, D. C., "Modeling The Non-Quasi-Static Metal-Semiconductor Space-Charge-Region Capacitance" (1989). Faculty Bibliography 1980s. 801.