Title

Physics-Based Bipolar Transistor Model For Low-Temperature Circuit Simulation

Comments

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Abbreviated Journal Title

J. Appl. Phys.

Keywords

Physics; Applied

Abstract

A comprehensive bipolar transistor model based on the Gummel-Poon model for low-temperature circuit simulation is presented. Low-temperature physical properties such as doping-dependent dielectric permittivity, temperature-dependent free-carrier mobility and intrinsic carrier density, and deionization of impurity dopants are included in the model. Consequently, the model does not require temperature-fitting parameters as does the Gummel-Poon model. Comparisons of the present model with the Gummel-Poon model, with experimental data, and with PISCES two-dimensional device simulation are included.

Journal Title

Journal of Applied Physics

Volume

66

Issue/Number

9

Publication Date

1-1-1989

Document Type

Article

Language

English

First Page

4474

Last Page

4480

WOS Identifier

WOS:A1989AX60100073

ISSN

0021-8979

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