Title

Circuit Modeling Of Transient Emitter Crowding And Dynamic Resistance Effects For Advanced Bipolar-Transistors

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Solid-State Electron.

Keywords

Engineering; Electrical & Electronic; Physics; Applied; Physics; Condensed Matter

Abstract

Advanced bipolar transistors operating in fast switching transient have been modeled taking into account time-dependent series resistances and nonuniform transient current and charge distribution effects. A two-dimensional device simulator—PISCES is used to justify the underlying physics. SPICE simulations employing the present model show good agreement with measurements and device simulations.

Journal Title

Solid-State Electronics

Volume

32

Issue/Number

8

Publication Date

1-1-1989

Document Type

Article

Language

English

First Page

623

Last Page

631

WOS Identifier

WOS:A1989AJ35100005

ISSN

0038-1101

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