Double-Drift Avalanche Photodetectors

    Authors

    B. C. Deloach;J. N. Hollenhorst

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    A new avalanche photodiode device is proposed that has superior noise and bandwidth performance, This structure in; corporates a drift region on both sides of the high field avalanche region. With the proper design, this reduces the capacitance by nearly a factor of two, without degrading the transit-time limited speed,In fact, it is shown that the double-drift structure can actually improve the intrinsic device speed, It is also shown that for high speed devices in which the layers must be kept thin, it can be advantageous to absorb light on both sides of the avalanche region, in spite of the consequent increase in the excess noise factor.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    41

    Issue/Number

    12

    Publication Date

    1-1-1994

    Document Type

    Article

    Language

    English

    First Page

    2301

    Last Page

    2304

    WOS Identifier

    WOS:A1994PW50100011

    ISSN

    0018-9383

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