Title
Source Characterization For X-Ray Proximity Lithography
Abbreviated Journal Title
Opt. Lett.
Keywords
LASER; PLASMAS; Optics
Abstract
Calibrated x-ray spectra from laser-produced plasmas of materials with atomic numbers varying between 12 (Mg) and 83 (Bi) were recorded to optimize the conversion efficiency for proximity lithography in a 0.5-nm band centered at 1 nm. The highest efficiency (similar to 0.8%) was found for L-shell emitters such as Cu and M-shell emitters such as Ba. First-order debris measurements were carried out by measurement of the layer thickness deposited on witness plates 2 cm away from the target. Layers of 30-nm thickness were deposited in a single laser shot with Au and W targets.
Journal Title
Optics Letters
Volume
19
Issue/Number
24
Publication Date
1-1-1994
Document Type
Article
Language
English
First Page
2047
Last Page
2049
WOS Identifier
ISSN
0146-9592
Recommended Citation
"Source Characterization For X-Ray Proximity Lithography" (1994). Faculty Bibliography 1990s. 1045.
https://stars.library.ucf.edu/facultybib1990/1045
Comments
Authors: contact us about adding a copy of your work at STARS@ucf.edu