Title

A Seminumerical Model For Multi-Emitter Finger Algaas/Gaas Hbts

Authors

Authors

A. Kager; J. J. Liou; L. L. Liou;C. Huang

Comments

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Abbreviated Journal Title

Solid-State Electron.

Keywords

HETEROJUNCTION BIPOLAR-TRANSISTORS; TEMPERATURE; DESIGN; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

A semi-numerical model for the multiple-emitter finger heterojunction bipolar transistor (HBT) is presented. The model consists of an analytical model applicable for the single-finger HBT and a numerical program which solves the three-dimensional heat transfer equations. Experimentally observed thermally-limited I-V characteristics like the negative conductance and current crush phenomenon are accurately described by the model.

Journal Title

Solid-State Electronics

Volume

37

Issue/Number

11

Publication Date

1-1-1994

Document Type

Article

DOI Link

http://dx.doi.org/10.1016/0038-1101(94)90173-2

Language

English

First Page

1825

Last Page

1832

WOS Identifier

WOS:A1994PJ62700005

ISSN

0038-1101

Recommended Citation

"A Seminumerical Model For Multi-Emitter Finger Algaas/Gaas Hbts" (1994). Faculty Bibliography 1990s. 1078.
https://stars.library.ucf.edu/facultybib1990/1078