A Seminumerical Model For Multi-Emitter Finger Algaas/Gaas Hbts

    Authors

    A. Kager; J. J. Liou; L. L. Liou;C. Huang

    Comments

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    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    HETEROJUNCTION BIPOLAR-TRANSISTORS; TEMPERATURE; DESIGN; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    A semi-numerical model for the multiple-emitter finger heterojunction bipolar transistor (HBT) is presented. The model consists of an analytical model applicable for the single-finger HBT and a numerical program which solves the three-dimensional heat transfer equations. Experimentally observed thermally-limited I-V characteristics like the negative conductance and current crush phenomenon are accurately described by the model.

    Journal Title

    Solid-State Electronics

    Volume

    37

    Issue/Number

    11

    Publication Date

    1-1-1994

    Document Type

    Article

    Language

    English

    First Page

    1825

    Last Page

    1832

    WOS Identifier

    WOS:A1994PJ62700005

    ISSN

    0038-1101

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