Base And Collector Currents Of Pre-Burn-In And Post-Burn-In Algaas/Gaas Heterojunction Bipolar-Transistors

    Authors

    J. J. Liou;C. I. Huang

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    MODEL; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    The base and collector currents (I(B) and I(C)) of the pre- and post-burn-in Al-GaAs/GaAs heterojunction bipolar transistor (HBT) are studied. It is shown experimentally that the burn-in test gives rise to a larger I(B) but does not alter I(C) notably. An empirical model which can explain such trends is also developed. The model suggests that the increased I(B) in the post-burn-in HBT results from an increase in the space-charge region recombination current and a decrease in both the surface and base bulk recombination currents. Such occurrences can be attributed to the recombination/thermal enhanced diffusion of defects from GaAs surface and bulk to dislocations near the hetero-interface.

    Journal Title

    Solid-State Electronics

    Volume

    37

    Issue/Number

    7

    Publication Date

    1-1-1994

    Document Type

    Article

    Language

    English

    First Page

    1349

    Last Page

    1352

    WOS Identifier

    WOS:A1994NH00700002

    ISSN

    0038-1101

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