Analytical Model For The Algaas/Gaas Multiemitter Finger Hbt Including Self-Heating And Thermal Coupling Effects

    Authors

    J. J. Liou; L. L. Liou;C. I. Huang

    Comments

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    Abbreviated Journal Title

    IEE Proc.-Circuit Device Syst.

    Keywords

    HETEROJUNCTION BIPOLAR TRANSISTOR; SEMICONDUCTOR DEVICE MODELING; HETEROJUNCTION BIPOLAR-TRANSISTORS; EMITTER; DESIGN; GAAS; RESISTANCE; OPERATION; Engineering, Electrical & Electronic

    Abstract

    An analytical model which can be used to predict the thermal as well as electronic behaviour of the multiple emitter hererojunction bipolar transistor (HBT) is presented. The model is developed from a knowledge of device make-up (doping concentrations, layer thicknesses etc.), and relevant physics (such as the effects of graded heterojunction, self-heating, thermal coupling and ballast emitter resistance) is included in a unified manner. Thermal runaway phenomenon observed in the multifinger HBT at high current levels has been successfully described. Experimental evidence obtained from six-finger and four-finger HBTs are included in support of the model. The thermal runaway phenomenon is caused by the uneven increase of the base and collector currents at elevated temperatures due to the thermal effect.

    Journal Title

    Iee Proceedings-Circuits Devices and Systems

    Volume

    141

    Issue/Number

    6

    Publication Date

    1-1-1994

    Document Type

    Article

    Language

    English

    First Page

    469

    Last Page

    475

    WOS Identifier

    WOS:A1994PX84900007

    ISSN

    1350-2409

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