Title
Analytical Model For The Algaas/Gaas Multiemitter Finger Hbt Including Self-Heating And Thermal Coupling Effects
Abbreviated Journal Title
IEE Proc.-Circuit Device Syst.
Keywords
HETEROJUNCTION BIPOLAR TRANSISTOR; SEMICONDUCTOR DEVICE MODELING; HETEROJUNCTION BIPOLAR-TRANSISTORS; EMITTER; DESIGN; GAAS; RESISTANCE; OPERATION; Engineering, Electrical & Electronic
Abstract
An analytical model which can be used to predict the thermal as well as electronic behaviour of the multiple emitter hererojunction bipolar transistor (HBT) is presented. The model is developed from a knowledge of device make-up (doping concentrations, layer thicknesses etc.), and relevant physics (such as the effects of graded heterojunction, self-heating, thermal coupling and ballast emitter resistance) is included in a unified manner. Thermal runaway phenomenon observed in the multifinger HBT at high current levels has been successfully described. Experimental evidence obtained from six-finger and four-finger HBTs are included in support of the model. The thermal runaway phenomenon is caused by the uneven increase of the base and collector currents at elevated temperatures due to the thermal effect.
Journal Title
Iee Proceedings-Circuits Devices and Systems
Volume
141
Issue/Number
6
Publication Date
1-1-1994
Document Type
Article
Language
English
First Page
469
Last Page
475
WOS Identifier
ISSN
1350-2409
Recommended Citation
"Analytical Model For The Algaas/Gaas Multiemitter Finger Hbt Including Self-Heating And Thermal Coupling Effects" (1994). Faculty Bibliography 1990s. 1110.
https://stars.library.ucf.edu/facultybib1990/1110
Comments
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