Simple Method For Extracting The Difference Between The Drain And Source Series Resistances In Mosfets

Authors

Authors

A. Ortizconde; J. J. Liou; W. Wong;F. J. G. Sanchez

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Electron. Lett.

Keywords

MOSFETS; SEMICONDUCTOR DEVICE CHARACTERIZATION; CHANNEL LENGTH; Engineering, Electrical & Electronic

Abstract

A simple method for extracting the difference between the drain and source series resistances (R(d)-R(s)) in MOSFETs is presented. This method is applicable for n- and p-channel MOSFETs with any channel length. The results show that the magnitude of (R(d)-R(s)) increases with the drain current.

Journal Title

Electronics Letters

Volume

30

Issue/Number

12

Publication Date

1-1-1994

Document Type

Article

DOI Link

http://dx.doi.org/10.1049/el:19940681

Language

English

First Page

1013

Last Page

1015

WOS Identifier

WOS:A1994NV16000063

ISSN

0013-5194

Recommended Citation

"Simple Method For Extracting The Difference Between The Drain And Source Series Resistances In Mosfets" (1994). Faculty Bibliography 1990s. 1136.
https://stars.library.ucf.edu/facultybib1990/1136