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Abbreviated Journal Title

Phys. Rev. B

Keywords

Highly Excited Semiconductors; Refraction; Algaas; Index; Mechanisms; Physics; Condensed Matter

Abstract

The bound-electronic optical nonlinearities in highly excited semiconductors (i.e., semiconductor lasers) have been calculated using a two-parabolic-band model. The nonlinear absorption spectrum is first obtained using a dressed-state formalism taking into account the contributions from two-photon absorption, electronic Raman, and optical Stark effects. The nonlinear refractive index ( n 2 ) is then found by performing a Kramers-Kronig transformation on the nonlinear absorption spectrum. It is also shown that the quadratic Stark splitting of the bands leads to a shift in the quasi-Fermi levels, which introduces additional absorptive and refractive nonlinearities. The sign, magnitude, and the current-density dependence of the calculated n 2 agree well with some recently published experimental results for Al-Ga-As and In-Ga-As-P diode lasers.

Journal Title

Physical Review B

Volume

50

Issue/Number

19

Publication Date

1-1-1994

Document Type

Article

Language

English

First Page

14171

Last Page

14178

WOS Identifier

WOS:A1994PV10700027

ISSN

0163-1829

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