Base Current Reversal In Bipolar-Transistors And Circuits - A Review And Update

Authors

Authors

J. S. Yuan

Comments

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Abbreviated Journal Title

IEE Proc.-Circuit Device Syst.

Keywords

BASE CURRENT REVERSAL; BIPOLAR TRANSISTORS; GAAS; SI; AVALANCHE MULTIPLICATION; TEMPERATURE; JUNCTION; BREAKDOWN; MODEL; FT; Engineering, Electrical & Electronic

Abstract

A detailed study of base current reversal in silicon bipolar transitors and GaAs heterojunction bipolar transistors has been made. The physics of impact ionisation is presented followed by modelling of avalanche multiplication in devices. The effects of base current reversal on analogue and digital circuit operation are discussed.

Journal Title

Iee Proceedings-Circuits Devices and Systems

Volume

141

Issue/Number

4

Publication Date

1-1-1995

Document Type

Article

DOI Link

http://dx.doi.org/10.1049/ip-cds:19941101

Language

English

First Page

299

Last Page

306

WOS Identifier

WOS:A1994PC87200009

ISSN

1350-2409

Recommended Citation

"Base Current Reversal In Bipolar-Transistors And Circuits - A Review And Update" (1995). Faculty Bibliography 1990s. 1251.
https://stars.library.ucf.edu/facultybib1990/1251