Transient Analysis Of Minority-Carrier Diffusion In The Base Of P/N Junction Diodes And Bipolar-Transistors

    Authors

    M. P. Hasselbeck;J. J. Liou

    Comments

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    Abbreviated Journal Title

    Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap.

    Keywords

    SEMICONDUCTOR DEVICE MODELING; TRANSIENT ANALYSIS; CHARGE; Physics, Applied

    Abstract

    The time-dependent minority carrier distribution in the base of a bipolar p/n junction subjected to a step-up or step-down (switch-on or switch-off) applied voltage has been obtained. Analytical expressions are found by solving the time-dependent minority-carrier diffusion equation with appropriate boundary conditions. A general case with arbitrary base width under both switch-on and switch-off transients is considered. In addition, the validity of the constant-voltage and constant-current approaches under different base widths and different bias conditions are also discussed. This analytical approach is also applied to obtain the turn-on current transients of a forward-active bipolar transistor. The results are compared with those simulated from the conventional Gummel-Poon model and obtained from measurement.

    Journal Title

    Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers

    Volume

    34

    Issue/Number

    10

    Publication Date

    1-1-1995

    Document Type

    Article

    Language

    English

    First Page

    5562

    Last Page

    5566

    WOS Identifier

    WOS:A1995TF79500014

    ISSN

    0021-4922

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