New Laser-Plasma Source For Extreme-Ultraviolet Lithography

    Authors

    F. Jin;M. Richardson

    Comments

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    Abbreviated Journal Title

    Appl. Optics

    Keywords

    RAY PROJECTION LITHOGRAPHY; PHOTOGRAPHIC FILMS; Optics

    Abstract

    As the demands of lithographic fabrication of computer chips push toward ever-decreasing feature sizes, projection extreme-ultraviolet (EUV) lithography becomes an increasingly attractive technology. The radiation source of choice for this approach is a laser plasma with a high repetition rate. We report an investigation of a new candidate laser plasma source for EUV lithography that is based on line emission from ice-water targets. This radiation source has the potential to meet all the strict requirements of EUV conversion, debris elimination, operation, and cost for a demonstration lithographic system.

    Journal Title

    Applied Optics

    Volume

    34

    Issue/Number

    25

    Publication Date

    1-1-1995

    Document Type

    Article

    Language

    English

    First Page

    5750

    Last Page

    5760

    WOS Identifier

    WOS:A1995RR04400028

    ISSN

    0003-6935

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