A Model To Monitor The Current Gain Long-Term Instability In Algaas/Gaas Hbts Based On Noise And Leakage Current Characteristics

    Authors

    J. J. Liou; C. I. Huang;J. Barrette

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    DEVICES; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    A simple model is proposed to monitor the d.c. current gain long-term instability in the AlGaAs/GaAs heterojunction bipolar transistor (HBT). It is derived from the theory that the recombination current at the extrinsic base surface increases with time due to the surface degradation process. Furthermore, the initial 1/f noise and base leakage current characteristics have been used to provide the needed model parameters for the HBT surface recombination mechanism and surface quality, respectively. The current gain long-term variations calculated from the model for four HBTs compare favorably with those obtained from measurements. The model proposed is potentially useful to screen unreliable HBT lots without having to carry out the long-term stress test.

    Journal Title

    Solid-State Electronics

    Volume

    38

    Issue/Number

    4

    Publication Date

    1-1-1995

    Document Type

    Article

    Language

    English

    First Page

    761

    Last Page

    765

    WOS Identifier

    WOS:A1995QN62700003

    ISSN

    0038-1101

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