Title

A Model To Monitor The Current Gain Long-Term Instability In Algaas/Gaas Hbts Based On Noise And Leakage Current Characteristics

Authors

Authors

J. J. Liou; C. I. Huang;J. Barrette

Comments

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Abbreviated Journal Title

Solid-State Electron.

Keywords

DEVICES; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

A simple model is proposed to monitor the d.c. current gain long-term instability in the AlGaAs/GaAs heterojunction bipolar transistor (HBT). It is derived from the theory that the recombination current at the extrinsic base surface increases with time due to the surface degradation process. Furthermore, the initial 1/f noise and base leakage current characteristics have been used to provide the needed model parameters for the HBT surface recombination mechanism and surface quality, respectively. The current gain long-term variations calculated from the model for four HBTs compare favorably with those obtained from measurements. The model proposed is potentially useful to screen unreliable HBT lots without having to carry out the long-term stress test.

Journal Title

Solid-State Electronics

Volume

38

Issue/Number

4

Publication Date

1-1-1995

Document Type

Article

Language

English

First Page

761

Last Page

765

WOS Identifier

WOS:A1995QN62700003

ISSN

0038-1101

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