A Power-Amplifier Based On An Extended Resonance Technique

    Authors

    A. Martin; A. Mortazawi;B. C. Deloach

    Comments

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    Abbreviated Journal Title

    IEEE Microw. Guided Wave Lett.

    Keywords

    Engineering, Electrical & Electronic

    Abstract

    A new power amplifier based on an extended resonance technique is presented. This technique produces high power through multiplying the power handling capability of a single device by the number of devices employed white maintaining the gain of a single-device amplifier. An X-band power combining amplifier employing four 100 mW MESFET's was designed and constructed. The small signal gain was measured at 11.5 dB, and a maximum of 480 mW was obtained at 9.57 GHz with a power-added efficiency of 30.8%.

    Journal Title

    Ieee Microwave and Guided Wave Letters

    Volume

    5

    Issue/Number

    10

    Publication Date

    1-1-1995

    Document Type

    Article

    Language

    English

    First Page

    329

    Last Page

    331

    WOS Identifier

    WOS:A1995RV85200004

    ISSN

    1051-8207

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