Title
An Integral Gummel Relation For Single And Double-Heterojunction Graded-Base Hbts
Abbreviated Journal Title
Phys. Status Solidi A-Appl. Res.
Keywords
HETEROSTRUCTURE BIPOLAR-TRANSISTORS; OFFSET VOLTAGE; TRANSPORT; REGION; MODEL; Materials Science, Multidisciplinary; Physics, Applied; Physics, ; Condensed Matter
Abstract
An integral Gummel charge-control relation for both linearly graded and non-graded base and for single or double heterojunction bipolar transistors is derived. In addition to modeling the collector current density for different heterojunction systems, the analytical model is useful for analyzing the collector offset voltage of the heterojunction bipolar transistor with or without graded energy gap in the base. Comparisons with numerical and experimental data show excellent agreement.
Journal Title
Physica Status Solidi a-Applied Research
Volume
147
Issue/Number
2
Publication Date
1-1-1995
Document Type
Article
Language
English
First Page
643
Last Page
650
WOS Identifier
ISSN
0031-8965
Recommended Citation
"An Integral Gummel Relation For Single And Double-Heterojunction Graded-Base Hbts" (1995). Faculty Bibliography 1990s. 1514.
https://stars.library.ucf.edu/facultybib1990/1514
Comments
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