An Integral Gummel Relation For Single And Double-Heterojunction Graded-Base Hbts

    Authors

    J. S. Yuan

    Comments

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    Abbreviated Journal Title

    Phys. Status Solidi A-Appl. Res.

    Keywords

    HETEROSTRUCTURE BIPOLAR-TRANSISTORS; OFFSET VOLTAGE; TRANSPORT; REGION; MODEL; Materials Science, Multidisciplinary; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    An integral Gummel charge-control relation for both linearly graded and non-graded base and for single or double heterojunction bipolar transistors is derived. In addition to modeling the collector current density for different heterojunction systems, the analytical model is useful for analyzing the collector offset voltage of the heterojunction bipolar transistor with or without graded energy gap in the base. Comparisons with numerical and experimental data show excellent agreement.

    Journal Title

    Physica Status Solidi a-Applied Research

    Volume

    147

    Issue/Number

    2

    Publication Date

    1-1-1995

    Document Type

    Article

    Language

    English

    First Page

    643

    Last Page

    650

    WOS Identifier

    WOS:A1995QM18300034

    ISSN

    0031-8965

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