Title

The Bipolar Junction Transistor In Saturation

Authors

Authors

J. S. Yuan; Y. Dai; Y. Gu;J. Ning

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Phys. Status Solidi A-Appl. Res.

Keywords

Materials Science, Multidisciplinary; Physics, Applied; Physics, ; Condensed Matter

Abstract

The analytical equations of collector and base currents and emitter-base and collector-base diffusion capacitances of the bipolar junction transistor in saturation have been reviewed and updated. Comparisons of three base profiles (uniform, exponential, and Gaussian) in terms of electron current density, transconductance, diffusion capacitance, and base transit time are presented.

Journal Title

Physica Status Solidi a-Applied Research

Volume

149

Issue/Number

2

Publication Date

1-1-1995

Document Type

Article

DOI Link

http://dx.doi.org/10.1002/pssa.2211490227

Language

English

First Page

757

Last Page

769

WOS Identifier

WOS:A1995RH61400026

ISSN

0031-8965

Recommended Citation

"The Bipolar Junction Transistor In Saturation" (1995). Faculty Bibliography 1990s. 1516.
https://stars.library.ucf.edu/facultybib1990/1516