The Bipolar Junction Transistor In Saturation

    Authors

    J. S. Yuan; Y. Dai; Y. Gu;J. Ning

    Comments

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    Abbreviated Journal Title

    Phys. Status Solidi A-Appl. Res.

    Keywords

    Materials Science, Multidisciplinary; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    The analytical equations of collector and base currents and emitter-base and collector-base diffusion capacitances of the bipolar junction transistor in saturation have been reviewed and updated. Comparisons of three base profiles (uniform, exponential, and Gaussian) in terms of electron current density, transconductance, diffusion capacitance, and base transit time are presented.

    Journal Title

    Physica Status Solidi a-Applied Research

    Volume

    149

    Issue/Number

    2

    Publication Date

    1-1-1995

    Document Type

    Article

    Language

    English

    First Page

    757

    Last Page

    769

    WOS Identifier

    WOS:A1995RH61400026

    ISSN

    0031-8965

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