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Abbreviated Journal Title

J. Appl. Phys.

Keywords

Physics; Applied

Abstract

The ambipolar transport equation is solved numerically to provide the physical insight of high‐level free‐carrier injection in the quasi‐neutral region of n/p junction devices. It is shown that the diffusion current‐only approximation used conventionally to model the minority current fails when high‐level injection prevails. Our results further suggest that in high‐level injection, the drift current is comparable to the diffusion current and that the minority current in the quasi‐neutral region is position dependent even if the region is thin. Based on the numerical results, an empirical model is also developed which, while retaining the form of the conventional diffusion current‐only model, can accurately describe the current transport in an n/p junction including the effect of high injection.

Journal Title

Journal of Applied Physics

Volume

77

Issue/Number

4

Publication Date

1-1-1995

Document Type

Article

Language

English

First Page

1611

Last Page

1615

WOS Identifier

WOS:A1995QG50000039

ISSN

0021-8979

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