Title

Relative Errors Of Free-Carrier Density At Different Temperatures Calculated From Approximations For The Fermi-Dirac Integral

Authors

Authors

Y. Yue; J. J. Liou;A. Ortizconde

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap.

Keywords

SEMICONDUCTOR FREE-CARRIER DENSITY; FERMI-DIRAC INTEGRAL; F1/2(ETA); Physics, Applied

Abstract

We present the relative errors of the free-carrier concentration in a semiconductor at all temperatures associated a with three different approximations for the Fermi-Dirac integral of the order of 1/2. The results suggest that the errors peak at around 200 K and decrease outside this temperature range for all three doping concentrations considered (10(18), 10(19), and 10(20) cm(-3)).

Journal Title

Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers

Volume

34

Issue/Number

5A

Publication Date

1-1-1995

Document Type

Note

DOI Link

http://dx.doi.org/10.1143/jjap.34.2286

Language

English

First Page

2286

Last Page

2287

WOS Identifier

WOS:A1995RF66200016

ISSN

0021-4922

Recommended Citation

"Relative Errors Of Free-Carrier Density At Different Temperatures Calculated From Approximations For The Fermi-Dirac Integral" (1995). Faculty Bibliography 1990s. 1520.
https://stars.library.ucf.edu/facultybib1990/1520