Relative Errors Of Free-Carrier Density At Different Temperatures Calculated From Approximations For The Fermi-Dirac Integral

    Authors

    Y. Yue; J. J. Liou;A. Ortizconde

    Comments

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    Abbreviated Journal Title

    Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap.

    Keywords

    SEMICONDUCTOR FREE-CARRIER DENSITY; FERMI-DIRAC INTEGRAL; F1/2(ETA); Physics, Applied

    Abstract

    We present the relative errors of the free-carrier concentration in a semiconductor at all temperatures associated a with three different approximations for the Fermi-Dirac integral of the order of 1/2. The results suggest that the errors peak at around 200 K and decrease outside this temperature range for all three doping concentrations considered (10(18), 10(19), and 10(20) cm(-3)).

    Journal Title

    Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers

    Volume

    34

    Issue/Number

    5A

    Publication Date

    1-1-1995

    Document Type

    Note

    Language

    English

    First Page

    2286

    Last Page

    2287

    WOS Identifier

    WOS:A1995RF66200016

    ISSN

    0021-4922

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