Investigation Of Diode-Pumped 2.8-Mu M Er:Liyf4 Lasers With Various Doping Levels

    Authors

    T. Jensen; A. Diening; G. Huber;B. H. T. Chai

    Comments

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    Abbreviated Journal Title

    Opt. Lett.

    Keywords

    Optics

    Abstract

    We report on efficient lasers emission of Er:LiYF4 at 2.8 mu m. The crystals were pumped by InGaAs semiconductor laser emitting near 970 nm. The laser performance was investigated for different doping levels and yielded an optimum doping level of similar to 15%. At this Er3+ concentration we achieved a slope efficiency of 35%, which is identical to the quantum defect. Pumping at high power levels permits a true cw output power of 1.1 W at 2.8 mu m, which is of interest for several applications based on the strong water absorption in this wavelength range.

    Journal Title

    Optics Letters

    Volume

    21

    Issue/Number

    8

    Publication Date

    1-1-1996

    Document Type

    Article

    Language

    English

    First Page

    585

    Last Page

    587

    WOS Identifier

    WOS:A1996UE61700013

    ISSN

    0146-9592

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